Measurements of the critical parameters in high aspect ratio semiconductor microstructures such as deep trenches, deep holes, and through silicon vias

Wojtek J. Walecki

doi:10.1117/12.2646595

3 October 2022 Measurements of the critical parameters in high aspect ratio semiconductor microstructures such as deep trenches, deep holes, and through silicon vias

Wojtek J. Walecki

Author Affiliations +

Proceedings Volume 12221, Optical Manufacturing and Testing XIV; 1222111 (2022) https://doi.org/10.1117/12.2646595
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

We propose a scatterometry solution to the side wall angle measurement problem in high aspect ratios semiconductor structures such as through-silicon vias, deep holes, and deep trenches.

Conference Presentation

Citation Download Citation

Wojtek J. Walecki "Measurements of the critical parameters in high aspect ratio semiconductor microstructures such as deep trenches, deep holes, and through silicon vias", Proc. SPIE 12221, Optical Manufacturing and Testing XIV, 1222111 (3 October 2022); https://doi.org/10.1117/12.2646595

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