Investigation of the gas-phase deposition of material layers in plasma-vacuum systems for MEMS production processes

V. Samoylikov; S. Timoshenkov; S. Evstafyev

doi:10.1117/12.2619681

30 January 2022 Investigation of the gas-phase deposition of material layers in plasma-vacuum systems for MEMS production processes

V. Samoylikov, S. Timoshenkov, S. Evstafyev

Author Affiliations +

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121570L (2022) https://doi.org/10.1117/12.2619681
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

This paper presents the results of gas-phase deposition of silicon epitaxial layers studies obtained under real production conditions. The research is based on innovative techniques that have expanded the physical understanding of the process, which has improved the adequacy of the final results. Based on the developed physical modeling methodology, a study of the silicon epitaxial layers deposition process was carried out. The results were processed in a generalized form and could be represented by simple criterion relations. Based on the studies the area of the technological process with maximum possible homogeneity of silicon epitaxial layers deposition parameters was determined. It was shown that the silicon epitaxial layers deposition rate is determined by the interaction between the outgoing flow (from the nozzle) and reverse flow (at the moment when the wafer is between the nozzles). The use of the technique based on the autodopping effect showed that the distribution of the dopant impurity (from the local source) in the deposition zone is inhomogeneous and a significant part of the impurity is transferred in the direction of the jet flow. The plasma chemical deposition process of SiH_xN_y has been studied. As a defining parameter of the plasma chemical deposition process, the number Re_L characterizing the gas dynamics of the process is chosen. Studies were performed at pressures in the reaction chamber of 100, 50, and 10 Pa, which corresponds to values Re_L =1.2, 0.8, and 0.4. It is shown that greater uniformity of the deposited layer occurs at higher pressures.

Citation Download Citation

V. Samoylikov, S. Timoshenkov, and S. Evstafyev "Investigation of the gas-phase deposition of material layers in plasma-vacuum systems for MEMS production processes", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121570L (30 January 2022); https://doi.org/10.1117/12.2619681

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Semiconducting wafers

Deposition processes

Microelectromechanical systems

Visualization

Mathematical modeling

Analog electronics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years