Presentation + Paper
27 May 2022 High-performance graphene/InSb heterojunction mid-infrared photogated diode
Author Affiliations +
Abstract
Herein, we developed a high-performance graphene/InSb heterojunction mid-infrared (IR) photogated diode for IR image sensors. We achieved low noise owing to a significant reduction in the dark current and high responsivity, which is attributed to the graphene/InSb heterojunction diode structure and the photogating effect. The detection performance of the proposed device is better than that of conventional graphene-based IR sensors in the mid-infrared region of 3–5 μm. These results indicate that the combination of a simple graphene/InSb heterojunction and the photogating effect can produce IR image sensors with better detection performance than existing IR sensors.
Conference Presentation
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Masaaki Shimatani, Shoichiro Fukushima, and Shinpei Ogawa "High-performance graphene/InSb heterojunction mid-infrared photogated diode", Proc. SPIE 12107, Infrared Technology and Applications XLVIII, 121071Z (27 May 2022); https://doi.org/10.1117/12.2617386
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KEYWORDS
Photodetectors

Heterojunctions

Mid-IR

Graphene

Infrared sensors

Infrared imaging

Chemical vapor deposition

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