Paper
2 December 2021 Numerical simulation of the ZnSe crystal doping profile influence on the threshold for the parasitic lasing development in a disk ZnSe:Fe2+ laser
Author Affiliations +
Proceedings Volume 12086, XV International Conference on Pulsed Lasers and Laser Applications; 120861W (2021) https://doi.org/10.1117/12.2606948
Event: XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation
Abstract
The results of computer simulation by the finite element method of thermoelastic stresses arising during pulsed pumping in ZnSe:Fe disk laser crystals with a different doping profile are presented. The thresholds for the occurrence of parasitic generation in a disk ZnSe:Fe laser are numerically analyzed at these doping profiles. Based on the maximum output pulse energy in a ZnSe:Fe laser and the maximum distortion of the optical density of the active element, different doping profiles were compared.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. E. Alekseev, N. M. Andronova, S. Y. Kazantsev, O. V. Kolesnikov, and S. V. Podlesnikh "Numerical simulation of the ZnSe crystal doping profile influence on the threshold for the parasitic lasing development in a disk ZnSe:Fe2+ laser", Proc. SPIE 12086, XV International Conference on Pulsed Lasers and Laser Applications, 120861W (2 December 2021); https://doi.org/10.1117/12.2606948
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KEYWORDS
Crystals

Doping

Laser crystals

Iron

Laser damage threshold

Spherical lenses

Disk lasers

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