High NA EUV stochastic resist modeling considered with development parameters

R. Tsuzuki; X. Liu; K. Oyama

doi:10.1117/12.2613438

26 May 2022 High NA EUV stochastic resist modeling considered with development parameters

R. Tsuzuki, X. Liu, K. Oyama

Proceedings Volume 12051, Optical and EUV Nanolithography XXXV; 120510F (2022) https://doi.org/10.1117/12.2613438
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

In 2021 IRDS logic roadmap, required minimum contact/via pitch is 28 nm in 2025, which cannot be obtained by single exposure at 0.33 NA system using chemical amplified resist (CAR). To make the target possible, 0.55 NA system is the only way for single exposure. The relationship of resolution, roughness, and sensitivity has been known to be trade-off in CAR, and we tried optimizing them at 0.55 NA lithography simulation. For the optimization, not only resist material parameters, but also resist development parameters were adjusted. In addition, we conducted numerical simulation for line and space (L/S) pattern of metal oxide resist (MOR), which is expected as one of the breakthroughs for making narrower patterns. We set up a MOR NTD model and calibrated it by experimental data. The calibrated model is applied to the evaluation of the patterning performance including dose to size (DtS), roughness, and resist profile. Simulation results regarding a new wet development method for MOR to break through the RLS trade-off are introduced.

Conference Presentation

Citation Download Citation

R. Tsuzuki, X. Liu, and K. Oyama "High NA EUV stochastic resist modeling considered with development parameters", Proc. SPIE 12051, Optical and EUV Nanolithography XXXV, 120510F (26 May 2022); https://doi.org/10.1117/12.2613438

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