Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP

Xiao Jin; Shiyu Xie; Baolai Liang; Xin Yi; Harry Lewis; Leh W. Lim; Yifan Liu; Beng Koon Ng; Diana L. Huffaker; Chee Hing Tan; Duu Sheng Ong; John P. R. David

doi:10.1117/12.2609929

4 March 2022 Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh W. Lim, Yifan Liu, Beng Koon Ng, Diana L. Huffaker, Chee Hing Tan, Duu Sheng Ong, John P. R. David

Author Affiliations +

Proceedings Volume 11997, Optical Components and Materials XIX; 119970B (2022) https://doi.org/10.1117/12.2609929
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

A series of AlAsSb p⁺-i-n⁺ and n⁺-i-p⁺ diodes with varying i-region thickness from 0.08μm to 1.55μm have been used to determine the temperature dependent impact ionization coefficients by performing avalanche multiplication measurements from 210K to 335K. The increase in electron and hole ionization coefficients as the temperature decreases is much smaller when compared to InAlAs and InP. This leads to a much smaller avalanche breakdown variation of 13mV/K in a 1.55μm p⁺- i-n⁺ diode. For a 10Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD), the variation in breakdown voltage is predicted to be only 15.58 mV/K.

Conference Presentation

Citation Download Citation

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh W. Lim, Yifan Liu, Beng Koon Ng, Diana L. Huffaker, Chee Hing Tan, Duu Sheng Ong, and John P. R. David "Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP", Proc. SPIE 11997, Optical Components and Materials XIX, 119970B (4 March 2022); https://doi.org/10.1117/12.2609929

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