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This theoretical work shows that ultra-thin InGaAs solar cells can have the operation of a hot carrier solar cell. Considering a quantum modeling of the electronic transport we show that the open circuit voltage Voc increases with an energy-selective contact considered between the absorber and the reservoir. Moreover, we do not observe the feared corresponding current degradation. The Voc improvement agrees with a simple and general expression based on the isentropic carrier extraction, confirming the link between the voltage and the carrier temperature. Concerning the current, as already shown in a precedent work, if carriers are confined in the absorber the current across an energy-selective contact is of the same order of magnitude as that obtained without selectivity. This advantageous behavior is explained by the hybridation of states in the absorber and in the reservoir.
Nicolas Cavassilas,Imam Makhfudz,Anne-Marie Daré,Michel Lannoo,Marc Bescond, andFabienne Michelini
"Theoretical evidence of hot-ballistic-carriers in ultra-thin solar cell", Proc. SPIE 11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, 1199604 (4 March 2022); https://doi.org/10.1117/12.2609613
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Nicolas Cavassilas, Imam Makhfudz, Anne-Marie Daré, Michel Lannoo, Marc Bescond, Fabienne Michelini, "Theoretical evidence of hot-ballistic-carriers in ultra-thin solar cell," Proc. SPIE 11996, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, 1199604 (4 March 2022); https://doi.org/10.1117/12.2609613