Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu; Keshuang Li; Junjie Yang; Ying Lu; Zizhuo Liu; Mingchu Tang; Pamela Jurczak; Jae-Seong Park; Huiwen Deng; Hui Jia; Manyu Dang; Ana M. Sanchez; Richard Beanland; Wei Li; Xiaodong Han; Jinchuan Zhang; Huan Wang; Fengqi Liu; Siming Chen; Alwyn J. Seeds; Peter M. Smowton; Huiyun Liu

doi:10.1117/12.2601451

6 October 2021 Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy

Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana M. Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn J. Seeds, Peter M. Smowton, Huiyun Liu

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Proceedings Volume 11880, Emerging Applications in Silicon Photonics II; 118800H (2021) https://doi.org/10.1117/12.2601451
Event: SPIE Photonex, 2021, Glasgow, United Kingdom

Abstract

Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route of low‐cost and high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from the interface between III–V materials and Si, which significantly lowers the quality of III–V materials on Si. Here, a novel technique to achieve IB‐free GaAs monolithically grown on on‐axis Si (001) substrates by realizing the alternating straight and meandering single atomic steps on Si surface has been introduced via all-molecular beam epitaxy approach without the use of double Si atomic steps, which was previously believed to be the key for IB‐free III–V growth on Si. The periodic straight and meandering single atomic steps on Si surface are results of high‐temperature annealing of Si buffer layer. As a demonstration, an electrically pumped InAs quantum‐dot laser has been fabricated based on this IB‐free GaAs/Si platform with a maximum operating temperature of 120 °C. These results can be a major step towards monolithic integration of III–V materials and devices with the mature CMOS technology.

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Xuezhe Yu, Keshuang Li, Junjie Yang, Ying Lu, Zizhuo Liu, Mingchu Tang, Pamela Jurczak, Jae-Seong Park, Huiwen Deng, Hui Jia, Manyu Dang, Ana M. Sanchez, Richard Beanland, Wei Li, Xiaodong Han, Jinchuan Zhang, Huan Wang, Fengqi Liu, Siming Chen, Alwyn J. Seeds, Peter M. Smowton, and Huiyun Liu "Inversion boundary annihilation in GaAs grown on On‐Axis Silicon (001) via Molecular Beam Epitaxy", Proc. SPIE 11880, Emerging Applications in Silicon Photonics II, 118800H (6 October 2021); https://doi.org/10.1117/12.2601451

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KEYWORDS

Silicon

Gallium arsenide

Molecular beam epitaxy

Annealing

CMOS technology

Epitaxy

Indium arsenide

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