Poster + Presentation
30 September 2021 Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications
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Conference Poster
Abstract
Significant efforts have been dedicated to the development of inorganic-organic hybrid materials for next-generation EUV resists. Among the various synthesis, vapor-phase infiltration of metal source into existing e-beam photoresists using ALD process has drawn great attention. In this work, we have demonstrated the vapor-phase infiltration of both Hf and Al precursors into PMMA and HSQ resists, respectively. For example, under the electron exposure with 100 eV, both hybrid resists show relatively higher EUV absorption, increasing positive and negative tone. The detailed photochemical reactions of on electron exposure were investigated using an in-situ FTIR equipped with electron gun capability.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Su Min Hwang, Aditya Raja Gummadavelly, Dan N. Le, Yong Chan Jung, Jean-Francois Veyan, Nikhill M. Tiwale, Chang-Yong Nam, Jinho Ahn, and Jiyoung Kim "Photochemical study of metal infiltrated e-beam resist using vapor-phase infiltration for EUV applications", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118541C (30 September 2021); https://doi.org/10.1117/12.2601033
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KEYWORDS
Extreme ultraviolet

Metals

Atomic layer deposition

Extreme ultraviolet lithography

FT-IR spectroscopy

Photoresist processing

Polymethylmethacrylate

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