High-NA EUVL exposure tool: key advantages and program status

Jan Van Schoot; Sjoerd Lok; Eelco van Setten; Ruben Maas; Rudy Peeters; Jo Finders; Judon Stoeldraijer; Jos Benschop; Paul Graeupner; Peter Kuerz; Thomas Stammler; Kars Troost

doi:10.1117/12.2600951

27 September 2021 High-NA EUVL exposure tool: key advantages and program status

Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Thomas Stammler, Kars Troost

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Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 1185403 (2021) https://doi.org/10.1117/12.2600951
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are being applied in high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this so-called high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law for another decade. A novel lens design, capable of providing the required Numerical Aperture, has been identified; this so called anamorphic lens will provide 8nm resolution in all orientations. Paired with new, faster stages and more accurate sensors providing the tight focus and overlay control needed it enables future nodes. In this paper we will outline the advantages of High-NA, especially for managing the needed extreme low defect printing rates while maximizing the effective throughput for patterning economics. The imaging performance is being simulated based on expected surface figures of the illumination and projection optics. Next to this, an update will be given on the status of the developments at ZEISS and ASML. Buildings, cleanrooms and equipment are being constructed, mirror production is ramping up, many tests are carried out to ensure a smooth implementation.

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Jan Van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Thomas Stammler, and Kars Troost "High-NA EUVL exposure tool: key advantages and program status", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 1185403 (27 September 2021); https://doi.org/10.1117/12.2600951

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KEYWORDS

Extreme ultraviolet lithography

Device simulation

High volume manufacturing

Lens design

Mirrors

Optical lithography

Printing

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