Device physics of organic vertical transistors based on conductive network electrodes

Chuan Liu

doi:10.1117/12.2597195

1 August 2021 Device physics of organic vertical transistors based on conductive network electrodes

Chuan Liu

Proceedings Volume 11811, Organic and Hybrid Field-Effect Transistors XX; 118110E (2021) https://doi.org/10.1117/12.2597195
Event: SPIE Organic Photonics + Electronics, 2021, San Diego, California, United States

Abstract

Vertical organic field effect transistors (VOFET) and vertical static induction transistor (VSIT) have shown the advances of large on-current, high compatibility with sensors, ease of solution-processing and good mechanical flexibility. However, there has been no concise and explicit theories for these transistors. Here, we draw the physical images of the mechanisms, derive the electrostatic potentials, and propose the simple current-voltage relations for these vertical organic transistors. The theory has been verified by numerical simulation and are consistent with experimental results. The theories also provide guidances for device designing toward sharp turn-on properties, a large on-off ratio and good saturation degree.

Conference Presentation

Citation Download Citation

Chuan Liu "Device physics of organic vertical transistors based on conductive network electrodes", Proc. SPIE 11811, Organic and Hybrid Field-Effect Transistors XX, 118110E (1 August 2021); https://doi.org/10.1117/12.2597195

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