Interfaces play a key role in determining the performance of perovskite semiconductors. This talk will present a discussion on both internal and external interfaces of perovskites. First, I will discuss the characterization and properties of the most significant internal interface - grain boundary in perovskite semiconductors. Following this, I will demonstrate “grain-boundary functionalization” as an effective protocol to mitigate the negative impacts and imparting new functions of perovskite grain boundaries. Then, I will present a novel structure of “interpenetrating interface”, which is formed by an interdiffusion reaction between chemically modified perovskite and charge-transporting-layer. This structure delivers enhanced physical properties and chemical stability, highlighting the importance of external interface design in perovskite semiconductors. Finally, I will present a perspective on future studies of perovskite interfaces towards more efficient and stable optoelectronic devices.
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