Strainoptronics: 2D material optoelectronic with a bend

Volker J. Sorger

doi:10.1117/12.2592182

1 August 2021 Strainoptronics: 2D material optoelectronic with a bend

Volker J. Sorger

Proceedings Volume 11796, Active Photonic Platforms XIII; 117960G (2021) https://doi.org/10.1117/12.2592182
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

Strainoptronics is an emerging concept that allows to manipulate and hence engineer a plurality of materials properties such as the bandgap, mobility, and Schottky barrier height for example. 2D materials are especially utilizable for strainoptronics given their low dimensionality leaning to a strong (2-4%) ‘strainability’. Here I share our latest device demonstrations including (a) a efficient TMDC photodetector at 1550nm wavelength on Silicon PICs (Nature Photonics), (b) engineering the Schottky barrier height and reducing the bandgap by 200meV (arXiv: 2012.07715), and (c) showing scaling laws of scaling-length-theory based slot detectors with a potential for high gain-bandwidth-product PIC-integrated photodectetors (Opt. Mat. Exp. 2020).

Conference Presentation

Citation Download Citation

Volker J. Sorger "Strainoptronics: 2D material optoelectronic with a bend", Proc. SPIE 11796, Active Photonic Platforms XIII, 117960G (1 August 2021); https://doi.org/10.1117/12.2592182

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