Paper
18 March 2021 Low-loss silicon optical modulator using doping compensation method at 2 μm wavelength band
Author Affiliations +
Proceedings Volume 11780, Global Intelligent Industry Conference 2020; 117800C (2021) https://doi.org/10.1117/12.2589029
Event: Global Intelligent Industry Conference 2020, 2020, Guangzhou, China
Abstract
Compared with the optical modulator based on 1310 nm and 1550 nm wavelength band, the silicon-based modulator at 2 μm band has a higher absorption loss, since the free carrier effect is more significant in the 2 μm band. In this paper, we demonstrate an optical modulator at 2 μm wavelength band, using a doping compensation method. We reduce absorption loss and keep the modulation extinction ratio at a high level through optimizing waveguide width, PN junction offset and compensated area. With doping compensation, the modulator has an absorption loss by PN junction of 2.8 dB/cm at 0 V and an extinction ratio of 14.2 dB at bitrates of 40 Gb/s.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heming Hu, Xindan Zhang, Miaomiao Gu, Yufei Liu, Lianxi Jia, Song Feng, Qing Fang, and Hua Chen "Low-loss silicon optical modulator using doping compensation method at 2 μm wavelength band", Proc. SPIE 11780, Global Intelligent Industry Conference 2020, 117800C (18 March 2021); https://doi.org/10.1117/12.2589029
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
Back to Top