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5 March 2021 III-nitride strain relaxation enabled by porous GaN for optoelectronic applications
Shubhra Pasayat, Chirag Gupta, Matthew Wong, Ryan Ley, Yifan Wang, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra
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Proceedings Volume 11706, Light-Emitting Devices, Materials, and Applications XXV; 117060C (2021) https://doi.org/10.1117/12.2577008
Event: SPIE OPTO, 2021, Online Only
Abstract
InGaN based blue and green LEDs are quite attractive owing to their high efficiency, low power consumption, and high performance even at scaled dimensions. However, for red emission higher indium content in the QWs leads to poor performance due to increased strain in the structure. We will discuss a novel elastic strain relaxation technique using porous GaN pseudo-substrates which will allow enhanced indium uptake in the quantum wells for high-efficiency red InGaN micro-LEDs outperforming AlInGaP based micro-LEDs. Results including green and orange luminescence from micro-LEDs (<5 µm) fabricated on these pseudo-substrates will be discussed.
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Shubhra Pasayat, Chirag Gupta, Matthew Wong, Ryan Ley, Yifan Wang, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Umesh K. Mishra "III-nitride strain relaxation enabled by porous GaN for optoelectronic applications", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060C (5 March 2021); https://doi.org/10.1117/12.2577008
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KEYWORDS
Gallium nitride
Indium gallium nitride
Optoelectronics
Indium
Aluminium gallium indium phosphide
Display technology
Light emitting diodes
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