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5 March 2021 Improvement of device performance in UV-B laser diodes
Motoaki Iwaya, Shunya Tanaka, Moe Shimokawa, Yuya Ogino, Tomoya Omori, Kazuki Yamada, Sayaka Ishizuka, Shohei Teramura, Kosuke Sato, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hideto Miyake
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860Q (2021) https://doi.org/10.1117/12.2575973
Event: SPIE OPTO, 2021, Online Only
Abstract
Ultraviolet (UV) semiconductor lasers are widely used in medical and industrial applications, and their commercialization is strongly desired. Recently, laser oscillation by current injection in the UV-C and UV-B regions has been reported . From now on, it is necessary to demonstrate CW operation, which is indispensable for practical applications. In order to realize this, it is important to understand the internal loss and optical gain of the current devices. In this presentation, we report the details of our UV-B lasers. Specifically, we would like to discuss the results of the variable stripe length analysis of the internal loss of the obtained device and the performance of the UV-B lasers. The results show that the internal losses of the optimized UV-B laser are relatively low and good values are obtained. We also discuss the details of polarization doping, which is very effective in the realization of these UV lasers.
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Motoaki Iwaya, Shunya Tanaka, Moe Shimokawa, Yuya Ogino, Tomoya Omori, Kazuki Yamada, Sayaka Ishizuka, Shohei Teramura, Kosuke Sato, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hideto Miyake "Improvement of device performance in UV-B laser diodes", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860Q (5 March 2021); https://doi.org/10.1117/12.2575973
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KEYWORDS
Semiconductor lasers
Ultraviolet radiation
Applied physics
Continuous wave operation
Doping
Polarization
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