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Here we report a new design for enlargement of the detection limit of a convention near infrare d InGaAs/InP photodetector to short wavelength infrared. In the new device configurations, we used GaAs 0.51Sb0 .49 as the p layer instead of InP layer because of its superiority in the hole lifetime. Also, by introducing different thickness of the GaAsSb in the absorption layer beside InGaAs, we engineered the electron and hole concentration in their corresponding interfaces of the absorption layer as well as the y component of the electric field to reach higher responsivity. The successful optimization of hybrid absorption layer photodetector with short wavelength infrared detection may accelerate the development of high-performance micro devices based on such configurations.
Hossein Anabestani andDayan Ban
"Optimization of novel hybrid absorption layer for high performance p-i-n micro photodetector", Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 116800S (5 March 2021); https://doi.org/10.1117/12.2577277
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Hossein Anabestani, Dayan Ban, "Optimization of novel hybrid absorption layer for high performance p-i-n micro photodetector," Proc. SPIE 11680, Physics and Simulation of Optoelectronic Devices XXIX, 116800S (5 March 2021); https://doi.org/10.1117/12.2577277