Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors

J. Bogdanowicz; Y. Oniki; K. Kenis; Y. Muraki; T. Nuytten; S. Sergeant; A. Franquet; V. Spampinato; T. Conard; I. Hoflijk; J. Meersschaut; N. Claessens; A. Moussa; D. Van Den Heuvel; J. Hung; R. Koret; A.-L. Charley; P. Leray

doi:10.1117/12.2581800

22 February 2021 Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors

J. Bogdanowicz, Y. Oniki, K. Kenis, Y. Muraki, T. Nuytten, S. Sergeant, A. Franquet, V. Spampinato, T. Conard, I. Hoflijk, J. Meersschaut, N. Claessens, A. Moussa, D. Van Den Heuvel, J. Hung, R. Koret, A.-L. Charley, P. Leray

Author Affiliations +

Proceedings Volume 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV; 116111Q (2021) https://doi.org/10.1117/12.2581800
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Nanosheet Field-Effect Transistors (FETs) are candidates to replace today’s finFETs as they offer both an enhanced electrostatic control and a reduced footprint. The processing of these devices involves the selective lateral etching, also called cavity etch, of the SiGe layers of a vertical Si/SiGe superlattice, to isolate the future vertically stacked Si channels. In this work, we evaluate the capabilities of various conventional Critical Dimension (CD) and alternative spectroscopic techniques for this challenging measurement of a buried CD. We conclude that Raman and energy-dispersive X-ray spectroscopies are very promising techniques for fast inline cavity depth measurements.

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J. Bogdanowicz, Y. Oniki, K. Kenis, Y. Muraki, T. Nuytten, S. Sergeant, A. Franquet, V. Spampinato, T. Conard, I. Hoflijk, J. Meersschaut, N. Claessens, A. Moussa, D. Van Den Heuvel, J. Hung, R. Koret, A.-L. Charley, and P. Leray "Spectroscopy: a new route towards critical-dimension metrology of the cavity etch of nanosheet transistors", Proc. SPIE 11611, Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 116111Q (22 February 2021); https://doi.org/10.1117/12.2581800

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