Presentation + Paper
1 March 2021 Overlay models for nanoimprint lithography
Nilabh Roy, Mario Meissl, Takahiro Yoshida, Anshuman Cherala, Xiaoming Lu, Jeffrey Klein, Mingji Lou, Jin Choi, Hiroyuki Sekiguchi, Takashi Shibayama, Mitsuru Hiura
Author Affiliations +
Abstract
The integration of a NIL into production for advanced memory devices will require compatibility with existing high-end optical lithography processes in order to meet the aggressive overlay performance specifications. To deliver such a demanding overlay specification, it is necessary for NIL to achieve reliable alignment and to expand its overlay error budget to include as many as higher-order error components along with their countermeasure options. In this paper, NIL overlay models have been developed to address alignment of full fields and partial fields.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nilabh Roy, Mario Meissl, Takahiro Yoshida, Anshuman Cherala, Xiaoming Lu, Jeffrey Klein, Mingji Lou, Jin Choi, Hiroyuki Sekiguchi, Takashi Shibayama, and Mitsuru Hiura "Overlay models for nanoimprint lithography", Proc. SPIE 11610, Novel Patterning Technologies 2021, 1161006 (1 March 2021); https://doi.org/10.1117/12.2584742
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KEYWORDS
Nanoimprint lithography

Overlay metrology

Optical alignment

Semiconducting wafers

Photomasks

Optical lithography

Wafer testing

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