The comparative study of using Si and Te doping tunnel junction of GaAs vertical tandem monochromatic photovoltaic cell

Hui Deng; Hui Huang; Feng Huang; ChengGang Guan

doi:10.1117/12.2585466

8 December 2020 The comparative study of using Si and Te doping tunnel junction of GaAs vertical tandem monochromatic photovoltaic cell

Hui Deng, Hui Huang, Feng Huang, ChengGang Guan

Author Affiliations +

Proceedings Volume 11606, ICOSM 2020: Optoelectronic Science and Materials; 116061D (2020) https://doi.org/10.1117/12.2585466
Event: Second International Conference on Optoelectronic Science and Materials (ICOSM 2020), 2020, Hefei, China

Abstract

Tunnel junction (TJ) is one of the key technologies for high voltage vertical multi-photovoltaic cell(HVVMPC). In this paper, two types of AlGaAs/GaAs TJs with silicon(Si) doping and tellurium(Te) doping technology are presented, and on this basis, two types of HVVMPCs including six sub-cells and different doping TJ are prepared. A temperature and monochromatic optical power characteristic comparative study for two types of devices shows a higher efficiency for Te doping HVVMPC. Therefore, the Te doping technology can be considered to improve the device performance of tandem monochromatic HVVMPC. In addition, The factors of TJ resistance at different bias voltage, external quantum efficiency(EQE) of HVVMPC and current matching characteristic are discussed. According to these analysis data and the conclusions in this paper, we can optimize HVVMPC including more sub-cells in future.

Citation Download Citation

Hui Deng, Hui Huang, Feng Huang, and ChengGang Guan "The comparative study of using Si and Te doping tunnel junction of GaAs vertical tandem monochromatic photovoltaic cell", Proc. SPIE 11606, ICOSM 2020: Optoelectronic Science and Materials, 116061D (8 December 2020); https://doi.org/10.1117/12.2585466

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