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Today, with the rapid development of two-dimensional materials, graphene has been unable to meet the existing research needs due to its own limitations. The current researches focus more on those materials with better properties, and two-dimensional Ga2O3 is one of the representatives of these new ultra-thin materials. This paper makes a comparison between the structure and properties of Ga2O3 body material and its two-dimensional layer, and will explain the reason why the special structure of 2D- Ga2O3 brings its excellent properties. Then, the current mainstream technology for manufacturing two-dimensional materials is introduced, and corresponding process methods for materials with different structures are given. Then, some controversial suggestions for optimizing two-dimensional Ga2O3 process are proposed in this study. The airflow velocity was analyzed for the reasons of the influence of these external environmental parameters on the optimization process. After the comparison experiment of XYZ axis, the growth state was confirmed by the metallographic, and the ideal result was obtained. Now it seems that two-dimensional materials of TMDCs, especially two-dimensional Ga2O3 holders, have more advantages than two-dimensional materials of graphene. Conditions such as monatomic structure, direct band gap, strong spin orbit coupling and wide bandgap make them have broad prospects in more fields.
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