Bi2O2Se was discovered as a promising two-dimensional (2D) semiconductor with high electron mobility, ultrafast photoresponse and excellent environmental stability. However, as so far, only chemical vapor deposition (CVD) Bi2O2Se nanofilms have been investigated and reported. Here, we firstly systematically studied the electrical and photoelectric properties of exfoliated few-layer Bi2O2Se nanoflakes. Results indicate that exfoliated Bi2O2Se based field effect transistor (FET) exhibited high mobility (~ 460 cm2V-1s-1) and high conductance (~ 4.9 mS). In addition, Exfoliated few-layer Bi2O2Se based photodetector demonstrates an ultra-sensitive photoresponse with good reproducibility at room-temperature for visible wavelengths, including a high photoresponsivity (~125 mA/W), a quick response time (< 40 ms) and a high external quantum efficiency (~ 30 %). These results offer the opportunities for developing the next generation of ultrasensitive high performance room-temperature photodetectors based on exfoliated few-layer Bi2O2Se nanoflakes.
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