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17 November 2020 Novel schemes of trapping regime aimed on efficiency enhancement in free-electron devices
Ilya V. Bandurkin, Nikolai Yu. Peskov, Andrey V. Savilov
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Proceedings Volume 11582, Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications; 115820G (2020) https://doi.org/10.1117/12.2579846
Event: Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications, 2020, Tomsk, Russian Federation
Abstract
Novel schemes of the trapping regime in the free-electron devices were studied. Proof-of-principle experiments on implementation of “non-resonant” trapping were performed in Ka-band and a high-efficiency ultra-wideband freeelectron maser-amplifier has been demonstrated. For shorter-wavelength free-electron lasers (FELs), we describe two different ways to use the regime of so-called “multi-stage” trapping: a narrow-band FEL-amplifier and a FEL operating in multi-frequency SASE regime. The advantages of the proposed regimes for increasing the FEL efficiency and for decreasing the sensitivity to the spread in parameters of the feeding electron beams are demonstrated.
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Ilya V. Bandurkin, Nikolai Yu. Peskov, and Andrey V. Savilov "Novel schemes of trapping regime aimed on efficiency enhancement in free-electron devices", Proc. SPIE 11582, Fourth International Conference on Terahertz and Microwave Radiation: Generation, Detection, and Applications, 115820G (17 November 2020); https://doi.org/10.1117/12.2579846
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KEYWORDS
Free electron lasers
Microwave radiation
Ka band
X-rays
Process modeling
Energy efficiency
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