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Due to the epsilon near zero (ENZ) effect, indium tin oxide (ITO) can be used in optical modulators and reduce the modulator’s size dramatically. The tunability of optical properties and the CMOS compatible capability make ITO more attractive. To study the properties of ITO thin films, several works have been done. Firstly, thin ITO thin films were obtained by magnetron sputtering with different oxygen flow rates ranging from 0 to 50sccm. Secondly, EDS was carried out to investigate the elements' content. It can be found that increasing oxygen flow rate increases the percentage of oxygen atom and Sn atom of ITO thin films. Thirdly, surface profiler was used to measure the stress value of the ITO thin films. We find that the tensile stress of ITO thin films tends to transform into compressive stress when the oxygen flow rate rises, which is worth considering in the design of devices. Fourthly, spectrometer and Hall effect measurement were applied to measure the normal incidence transmittance and electrical properties of the ITO thin films. Larger oxygen flow rate leads to the normal incidence transmittance of ITO thin films becoming larger. Hall effect measurement contributes to the conclusion that the carrier concentration of ITO thin films is able to range from 1019 to 1021 cm-3, and that when the oxygen flow rate is not too large, as the environment oxygen increases, the carrier concentration decreases and the mobility increases. This research can contribute to the design of compact ITO based optical modulators so as to achieve a better performance, which can further the integration of optical modulators.
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