Presentation
20 August 2020 Energy efficient memory with voltage control of magnetic skyrmions in nanostructures
Dhritiman Bhattacharya, Seyed Armin Razavi, Md Mahadi Rajib, Hao Wu, Bingqian Dai, Kang Wang, Jayasimha Atulasimha
Author Affiliations +
Abstract
Skyrmion manipulation utilizing Voltage Control of Magnetic Anisotropy (VCMA) can lead to small footprint nanomagnetic memory devices [1-2]. This talk will focus on using intermediate skyrmion states [3] to enable robust and energy efficient magnetization reversal with VCMA in the presence of thermal noise and defects and its scaling to lateral dimensions below 50 nm. We further discuss experimental demonstration of VCMA induced nonvolatile creation and annihilation of skyrmions in an antiferromagnet/ferromagnet/oxide heterostructure film [4] by applying a few volts. This could provide a pathway to control single skyrmion in an MTJ device using VCMA.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dhritiman Bhattacharya, Seyed Armin Razavi, Md Mahadi Rajib, Hao Wu, Bingqian Dai, Kang Wang, and Jayasimha Atulasimha "Energy efficient memory with voltage control of magnetic skyrmions in nanostructures", Proc. SPIE 11470, Spintronics XIII, 114703E (20 August 2020); https://doi.org/10.1117/12.2567197
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KEYWORDS
Magnetism

Nanostructures

Anisotropy

Control systems

Heterojunctions

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