Presentation + Paper
21 August 2020 Visible upconversion photoluminescence of bulk silicon and mesoscale silicon nanoparticles
Author Affiliations +
Abstract
We demonstrate the broadband visible luminescence from bulk crystalline silicon and silicon nanoparticles sized 100- 30 nm under near-infrared excitation. We show that the luminescence spectrum has two distinct peaks. The first being centered at 550 nm while the second appears close to the wavelength of the second harmonic of the excitation light. The appearance of the second peak is a signature of the highly athermal electron distribution never observed previously. The luminescence intensity and spectral shape strongly depend on the doping type and concentration. Despite being nonresonant, silicon nanoparticles enhance luminescence intensity when placed atop the silicon wafer. The observed phenomenon can be used for wafer inspection and defect detection, as well as for the creation of novel nanosources of light.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris I. Afinogenov, Anton S. Medvedev, Ilya M. Antropov, Nikita R. Filatov, Anton N. Sofronov, Eunhee Jeang, Sangwoo Bae, Taehyun Kim, Ingi Kim, Akinori Ohkubo, Sangmin Lee, Seulgi Lee, Wondon Joo, Minhwan Seo, Aleksander S. Shorokhov, Vladimir O. Bessonov, and Maksim V. Ryabko "Visible upconversion photoluminescence of bulk silicon and mesoscale silicon nanoparticles", Proc. SPIE 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, 114670Y (21 August 2020); https://doi.org/10.1117/12.2570415
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KEYWORDS
Silicon

Luminescence

Nanoparticles

Semiconducting wafers

Doping

Upconversion

Visible radiation

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