Paper
17 April 2020 Graphene/InAs nanowire composite structure photodetector
Author Affiliations +
Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114550H (2020) https://doi.org/10.1117/12.2558432
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
A composite photodetector was fabricated by using InAs nanowires and single-layer graphene. Under positive/negative bias, the device exhibits the response characteristics of a negative photoconductive photodetector and a Schottky junction photodetector, respectively. Under positive bias, the device is a negative photoconductive photodetector. The response current is less than the dark current. The maximum responsivity of the device is 736.4A/W, and there is also a significant response current in the case of low illumination intensity. Under negative bias, the device is a Schottky junction photodetector with a maximum response of 9.4A/W and a barrier height of 0.16eV. Combining the characteristics of the two photoelectric response characteristics, the advantages are complemented. It greatly improves the applicable environment of the device, expands the application space of the photodetector, and provides a new idea for the preparation of the photodetector
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Peng Liu, Bang Li, Xin Yan, Xia Zhang, and Xiao-Min Ren "Graphene/InAs nanowire composite structure photodetector", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114550H (17 April 2020); https://doi.org/10.1117/12.2558432
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KEYWORDS
Nanowires

Photodetectors

Indium arsenide

Graphene

Waveguides

Composites

Chemical vapor deposition

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