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MOS resistor arrays are the core devices in infrared hardware-in-the-loop simulation, and the imaging quality is directly related to the accuracy and confidence of the final simulation results. At present, a series of problems, such as image degradation and coupling distortion, will occur when the simulated digital infrared signal enters the MOS resistor array. Therefore, it is necessary to analyze the imaging principles and energy transfer process of the MOS resistor array based on its imaging mechanism, and to establish a process and radiation model of a single pixel, to represent its own physical characteristics. A similarity framework between input and output image signals was constructed, and the relationship between signals was tested and verified by image similarity algorithms and a multi-attribute fusion algorithm. The proposed similarity framework could provide an objective evaluation method to measure the MOS resistor array imaging quality. These achievements could provide an important theoretical basis for future research on coupling characteristics, reverse correction models and non-uniformity correction of larger scale MOS resistor arrays, while having significant value in practical engineering applications.
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