Presentation + Paper
20 March 2020 Taking the multi-wavelength DBO to the next level of accuracy and robustness
Author Affiliations +
Abstract
In multi patterning processes, overlay is now entangled with CD including OPC and stochastics. This combined effect is a serious challenge for continued shrink and is driving down the allowed overlay margin to an unprecedented level. We need to do everything to improve overlay where accurate measurement and control of wafer deformation is extremely important. This requires accuracy in overlay metrology that decouples target asymmetry from wafer deformation. Multiwavelength diffraction-based overlay (DBO) is positioned for providing such accuracy while maintaining the required measurement speed. At the same time, with the increase of process complexity in advanced nodes, several new types of target asymmetries are introduced. Some of such asymmetries vary even within the target / grating area (intra-grating) and some are so severe that it impacts the center of gravity shift of the overlay target.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinsun Kim, Jeongijn Lee, Chan Hwang, Seung Yoon Lee, Wooyoung Jung, Joonsoo Park, Kaustuve Bhattacharyya, Arie den Boef, Simon Mathijssen, Marc Noot, Farzad Farhadzadeh, Daniel Park, Kaustubh Padhye, Se-Ra Jeon, Seung-Bin Yang, Won-Jae Jang, and Oh-Sung Kwon "Taking the multi-wavelength DBO to the next level of accuracy and robustness", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251J (20 March 2020); https://doi.org/10.1117/12.2551676
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KEYWORDS
Overlay metrology

Semiconducting wafers

Calibration

Metrology

Diffraction gratings

Polarization

Etching

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