The EUV CNT pellicle: balancing material properties to optimize performance

Ivan Pollentier; Marina Y. Timmermans; Cedric Huyghebaert; Steven Brems; Emily E. Gallagher

doi:10.1117/12.2552357

23 March 2020 The EUV CNT pellicle: balancing material properties to optimize performance

Ivan Pollentier, Marina Y. Timmermans, Cedric Huyghebaert, Steven Brems, Emily E. Gallagher

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113231G (2020) https://doi.org/10.1117/12.2552357
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

EUV lithography wafer production has begun and consequently maximizing yield gains importance. One key component to high-yield lithography in manufacturing is using a pellicle to hold particles out of the focal plane and thereby minimize their impact on imaging. Using a pellicle simplifies manufacturing by eliminating wafer inspections that are used to indirectly monitor the presence of printable defects on the mask. The CNT-based pellicle – a membrane consisting of a network of carbon nanotubes – offers the advantage of very high EUV transmission and has demonstrated good durability at high EUV scanner power. Moreover, the microscopic properties of the network can be tuned by modifying several CNT membrane parameters, such as the individual CNT type and diameter, the degree of bundling, the density and the coating. The challenge is balancing these CNT material parameters for optimal performance in the EUV scanner: high transmission, low impact on imaging through scattered light, and low probability for particles to pass. Each of these areas will be addressed along with simulated and experimental data illustrating the value of a CNT-based EUV pellicle solution today and for the future.

Conference Presentation

Citation Download Citation

Ivan Pollentier, Marina Y. Timmermans, Cedric Huyghebaert, Steven Brems, and Emily E. Gallagher "The EUV CNT pellicle: balancing material properties to optimize performance", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231G (23 March 2020); https://doi.org/10.1117/12.2552357

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