Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)

Justin Goodrich; Onoriode N. Ogidi-Ekoko; Thomas Farinha; Alexandra Howzen; Animesh Kundu; Jonathan J. Wierer; Nicholas Strandwitz; Nelson Tansu

doi:10.1117/12.2548753

10 March 2020 Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)

Justin Goodrich, Onoriode N. Ogidi-Ekoko, Thomas Farinha, Alexandra Howzen, Animesh Kundu, Jonathan J. Wierer, Nicholas Strandwitz, Nelson Tansu

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112811R (2020) https://doi.org/10.1117/12.2548753
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Magnesium oxide (MgO) is a promising dielectric for use with GaN due its similar crystal structure and lattice constant, large bandgap, and high dielectric constant. We report on the structural properties of MgO films deposited on GaN templates on sapphire substrates via the atomic layer deposition (ALD) technique. Analysis of the crystal quality and structure as a function of surface treatment and growth temperature are presented. I-V and C-V measurements of MgO/GaN metal-oxide-semiconductor capacitance structures are also presented.

Conference Presentation

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Justin Goodrich, Onoriode N. Ogidi-Ekoko, Thomas Farinha, Alexandra Howzen, Animesh Kundu, Jonathan J. Wierer, Nicholas Strandwitz, and Nelson Tansu "Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112811R (10 March 2020); https://doi.org/10.1117/12.2548753

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