Modeling of oxide semiconductors for power electronic devices (Conference Presentation)

Andriy Zakutayev

doi:10.1117/12.2554932

10 March 2020 Modeling of oxide semiconductors for power electronic devices (Conference Presentation)

Andriy Zakutayev

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810K (2020) https://doi.org/10.1117/12.2554932
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this talk, I will highlight our recent efforts in modeling Ga2O3 and other oxide materials and devices for application in power electronics. First, I will show the results of techno-economic analysis of the manufacturing cost of Ga2O3 wafers, supporting their projected cost advantage compared to SiC and GaN [1] Next, I will describe finite element analysis of electrical and thermal performance of vertical Ga2O3 transistors reported in literature, comparing MOSFET to FinFET device architectures [2]. Finally, I will summarize the findings of first-principles computational search for wide band gap semiconductors with high figures of merit and large thermal conductivity, highlighting new oxide material candidates for power electronic applications [3]. [1] Joule 3, 1 (2019) [2] ECS Journ. Sol. St. Sci. Tech. 8 Q3202 (2019) [3] Energy Environ. Sci. (2019) DOI: 10.1039/c9ee01529a

Conference Presentation

Citation Download Citation

Andriy Zakutayev "Modeling of oxide semiconductors for power electronic devices (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810K (10 March 2020); https://doi.org/10.1117/12.2554932

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