Investigation of the (Ga,In)2O3 and (Ga,Al)2O3 alloy systems on thin films grown by continuous composition spread pulsed laser deposition (Conference Presentation)

Daniel Splith; Anna Hassa; Max Kneiss; Chris Sturm; Philipp Storm; Catharina Krömmelbein; Holger von Wenckstern; Marius Grundmann

doi:10.1117/12.2552026

10 March 2020 Investigation of the (Ga,In)₂O₃ and (Ga,Al)₂O₃ alloy systems on thin films grown by continuous composition spread pulsed laser deposition (Conference Presentation)

Daniel Splith, Anna Hassa, Max Kneiss, Chris Sturm, Philipp Storm, Catharina Krömmelbein, Holger von Wenckstern, Marius Grundmann

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810D (2020) https://doi.org/10.1117/12.2552026
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Recently, immense interest in the semiconductor Ga₂O₃ arose due to its large bandgap and high predicted electrical breakdown field. By alloying Ga₂O₃ with In₂O₃ or Al₂O₃, its bandgap can be tuned over a large range, allowing possible applications in heterostructure devices or devices with an adjusted absorption energy. For this purpose, property screening over a large composition range is crucial. In this contribution, we present electrical, optical and structural properties of (Ga,In)₂O₃ and (Ga,Al)₂O₃ thin films grown by continuous composition spread pulsed laser deposition. The influence of growth parameters on phase boundaries were investigated and unipolar devices were fabricated.

Conference Presentation

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Daniel Splith, Anna Hassa, Max Kneiss, Chris Sturm, Philipp Storm, Catharina Krömmelbein, Holger von Wenckstern, and Marius Grundmann "Investigation of the (Ga,In)₂O₃ and (Ga,Al)₂O₃ alloy systems on thin films grown by continuous composition spread pulsed laser deposition (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810D (10 March 2020); https://doi.org/10.1117/12.2552026

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