We have recently developed a novel electro-optic modulator via external electrical gating of 2D MoS2 bilayers deposited within the inner regions of a silica hollow core anti-resonant fiber. The MoS2 film acts as the electro-optically active material, responding with increased absorption of waveguided modes when in the presence of an externally applied electric field. The bilayer is formed via a liquid phase deposition method, in which the single source precursor ammonium tetrathiomolybdate is thermally decomposed into MoS2. The device has to date demonstrated modulation depths of >3.5dB, at an operating DC voltage of 1500 V with an optical insertion loss of 7.5dB. We have thus developed a novel, active, composite material anti-resonant fiber (CM-ARF) technology platform, which despite high voltage requirements, show excellent potential for all-fiber electro-optical design and operation.
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