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9 March 2020 Role of wavelength on femtosecond laser ablation of dielectrics: From 258 nm to 2 µm (Conference Presentation)
Mario García Lechuga, Oliver Utéza, Nicolas Sanner, M. David Grojo
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Proceedings Volume 11270, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XX; 112700D (2020) https://doi.org/10.1117/12.2545544
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
We present a complete study, together with a careful experimental metrology, on single shot ablation of fused silica and sapphire induced by femtosecond pulses (<200-fs) ranging from 258 nm to 2000 nm. The wavelength-dependent fluence ablation threshold, increasing up to near infrared and saturating on the infrared range, allows to infer the role of drastically changing photoionization rates following Keldysh formalism. While it is also expected an energy deposition primarily relying on electron heating and avalanche in the infrared, we find deep craters are more efficiently obtained near the ablation threshold but the difference rapidly vanishes at increased fluences.
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Mario García Lechuga, Oliver Utéza, Nicolas Sanner, and M. David Grojo "Role of wavelength on femtosecond laser ablation of dielectrics: From 258 nm to 2 µm (Conference Presentation)", Proc. SPIE 11270, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XX, 112700D (9 March 2020); https://doi.org/10.1117/12.2545544
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KEYWORDS
Femtosecond phenomena
Laser ablation
Dielectrics
Infrared radiation
Absorption
Harmonic generation
Ionization
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