Paper
19 November 2019 Design and simulation of an anti-symmetric Bragg grating silicon modulator
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Abstract
We propose a silicon modulator in a multi-mode waveguide based on the anti-symmetric Bragg grating (AS-BG). When the incident light is in the fundamental transverse electric (TE0) mode, the reflected light of the AS-BG is in the first order transverse electric (TE1) mode, rather than the TE0 mode. Therefore, the reflected TE0 mode is radiated in a tapered waveguide (WG) that connects a multi-mode and single-mode WG. As a result, the back reflection of the Bragg grating (BG) based silicon modulator avoids the utilization of an optical circulator, especially when ingrating with a semiconductor laser, which is susceptible to the external light.
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Chunliang Ma and Yuechun Shi "Design and simulation of an anti-symmetric Bragg grating silicon modulator", Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 1118204 (19 November 2019); https://doi.org/10.1117/12.2537606
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KEYWORDS
Bragg gratings

Modulators

Optical design

Silicon

Finite-difference time-domain method

Modulation

Signal attenuation

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