Microscopic transport model for impurity scattering in two-dimensional novel a-T3 materials

D. H. Huang; A. Iurov; H.-Y. Xu; Y.-C. Lai; G. Gumbs

doi:10.1117/12.2527782

9 September 2019 Microscopic transport model for impurity scattering in two-dimensional novel a-T3 materials

D. H. Huang, A. Iurov, H.-Y. Xu, Y.-C. Lai, G. Gumbs

Proceedings Volume 11129, Infrared Sensors, Devices, and Applications IX; 1112902 (2019) https://doi.org/10.1117/12.2527782
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

The valley-dependent skew scattering of conduction electrons by impurities in two-dimensional α-T₃ materials is studied. The interplay of Lorentz and Berry forces, which act on mobile electrons in position and momentum spaces respectively, is quantified. Interactions of electrons with ionized impurities at two valleys are observed in different scattering directions. Both the zeroand first-order Boltzmann moment equations are used for calculating scattering-angle distributions of resulting skew currents, which are significantly enhanced by introducing microscopic inverse energy- and momentum-relaxation times to two moment equations.

Conference Presentation

Citation Download Citation

D. H. Huang, A. Iurov, H.-Y. Xu, Y.-C. Lai, and G. Gumbs "Microscopic transport model for impurity scattering in two-dimensional novel a-T3 materials", Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 1112902 (9 September 2019); https://doi.org/10.1117/12.2527782

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