Semiconductor-based nanostructures for spectral filtering

Clément Maës; Grégory Vincent; Fernando González-Posada Flores; Laurent Cerutti; Riad Haïdar; Thierry Taliercio

doi:10.1117/12.2527758

9 September 2019 Semiconductor-based nanostructures for spectral filtering

Clément Maës, Grégory Vincent, Fernando González-Posada Flores, Laurent Cerutti, Riad Haïdar, Thierry Taliercio

Proceedings Volume 11082, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVII; 110821T (2019) https://doi.org/10.1117/12.2527758
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

We present a theoretical and experimental study of a nanostructured guided-mode resonant (GMR) spectral filter operating in the long-wave infrared (LWIR) wavelength range. The component is made of III-V semiconductors: heavily n-doped InAsSb for the grating and GaSb for the waveguide of the GMR resonator. Angular and temperature dependencies are also presented with the relative experimental setups.

Citation Download Citation

Clément Maës, Grégory Vincent, Fernando González-Posada Flores, Laurent Cerutti, Riad Haïdar, and Thierry Taliercio "Semiconductor-based nanostructures for spectral filtering", Proc. SPIE 11082, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVII, 110821T (9 September 2019); https://doi.org/10.1117/12.2527758

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