PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The results of study of multilayer thin film structure using Rutherford Backscattering Spectroscopy (RBS) are presented. The structure 5(nm)Ta/30CuN/5Ta/3NiFe/16IrMn/2.0CoFe/0.9Ru/2.5CoFeB/2MgO/2.5CoFeB/10Ta/7Ru on SiO2 was used as a test sample. This kind of structure is using for MRAM fabrication. The RBS analysis of such samples might appear significant difficulties during measurement and interpretation of RBS spectra because of small layers thickness and overlay of peaks of elements with close masses. It was found that using different experimental conditions for RBS analysis one can obtain information about the density and thickness of each layer. The data about these parameters are presented.
V. Bachurin,A. Churilov,N. Melesov,E. Parshin,A. Rudy, andO. Trushin
"The opportunities of Rutherford backscattering spectroscopy for analysis of multilayer nanometer thin film structures", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221I (15 March 2019); https://doi.org/10.1117/12.2522103
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
V. Bachurin, A. Churilov, N. Melesov, E. Parshin, A. Rudy, O. Trushin, "The opportunities of Rutherford backscattering spectroscopy for analysis of multilayer nanometer thin film structures," Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221I (15 March 2019); https://doi.org/10.1117/12.2522103