Fabrication technology of sol-gel Al2O3 films for organic field-effect transistors

Sergey P. Avdeev; Evgeny Yu. Gusev

doi:10.1117/12.2522121

15 March 2019 Fabrication technology of sol-gel Al₂O₃ films for organic field-effect transistors

Sergey P. Avdeev, Evgeny Yu. Gusev

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102217 (2019) https://doi.org/10.1117/12.2522121
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

A sol-gel synthesis of alumina-based films and followed single crystal formation by thermal fields in vacuum are investigated that can be applied as gate dielectrics for organic field-effect transistors. The results showed that the values of roughness and thickness of the sol-gel Al₂O₃ film decreased by almost 2 times with increasing temperature annealing in vacuum. It is established that the dielectric constant of sol-gel films decreasing from 9.1 to 7.3 through vacuum annealing at 1000°C acquiring typical value of crystalline sapphire.

Citation Download Citation

Sergey P. Avdeev and Evgeny Yu. Gusev "Fabrication technology of sol-gel Al₂O₃ films for organic field-effect transistors", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102217 (15 March 2019); https://doi.org/10.1117/12.2522121

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