Simulation of single-electron transistor based on the molecule with single-atom charge center

A. A. Parshintsev; V. V. Shorokhov; E. S. Soldatov

doi:10.1117/12.2521838

15 March 2019 Simulation of single-electron transistor based on the molecule with single-atom charge center

A. A. Parshintsev, V. V. Shorokhov, E. S. Soldatov

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220N (2019) https://doi.org/10.1117/12.2521838
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

The transport characteristics of a single-electron transistor based on molecules with a monatomic charge center based on Rh, Ru, Pt, Sc, Cr atoms are calculated. The energy spectra of the studied molecules in various charge states are calculated. The results of the calculation of the parametric model’s coefficients of molecular shells for the studied molecules are presented.

Citation Download Citation

A. A. Parshintsev, V. V. Shorokhov, and E. S. Soldatov "Simulation of single-electron transistor based on the molecule with single-atom charge center", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220N (15 March 2019); https://doi.org/10.1117/12.2521838

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