Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor

S. Boubanga-Tombet; D. Yadav; T. Watanabe; A. Satou; W. Knap; V. V. Popov; V. Ryzhii; T. Otsuji

doi:10.1117/12.2520092

13 May 2019 Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor

S. Boubanga-Tombet, D. Yadav, T. Watanabe, A. Satou, W. Knap, V. V. Popov, V. Ryzhii, T. Otsuji

Author Affiliations +

Proceedings Volume 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI; 109822V (2019) https://doi.org/10.1117/12.2520092
Event: SPIE Defense + Commercial Sensing, 2019, Baltimore, MD, United States

Abstract

Linear and gapless energy spectrum of graphene carriers enables population inversion under optical and electrical pumping. We first theoretically discovered this phenomenon and demonstrated experimental observation of single-mode THz lasing with rather weak intensity at 100K in current-injection pumped graphene-channel field-effect transistors (GFETs). We introduce graphene surface plasmon polariton (SPP) instability to substantially boost the THz gain. We demonstrate our experimental observation of giant amplification of THz radiation at 300K stimulated by graphene plasmon instabilities in asymmetric dual-grating gate (ADGG) GFETs. Integrating the graphene SPP amplifier into a GFET laser will be a promising solution towards room-temperature intense THz lasing.

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S. Boubanga-Tombet, D. Yadav, T. Watanabe, A. Satou, W. Knap, V. V. Popov, V. Ryzhii, and T. Otsuji "Terahertz light amplification of stimulated emission of radiation in current-injection graphene channel transistor", Proc. SPIE 10982, Micro- and Nanotechnology Sensors, Systems, and Applications XI, 109822V (13 May 2019); https://doi.org/10.1117/12.2520092

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