Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

Mohammed A. Majid; Ahmad A. Al-Jabr; Rami T. El Afandy; Hassan M. Oubei; Dalaver H. Anjum; Mohamed Shehata; Tien K. Ng; Boon S. Ooi

doi:10.1117/12.2511878

1 March 2019 Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

Mohammed A. Majid, Ahmad A. Al-Jabr, Rami T. El Afandy, Hassan M. Oubei, Dalaver H. Anjum, Mohamed Shehata, Tien K. Ng, Boon S. Ooi

Author Affiliations +

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390L (2019) https://doi.org/10.1117/12.2511878
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO₂ and 0.1μm-Si₃N₄) and annealed at a high temperature (700-1000^oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.

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Mohammed A. Majid, Ahmad A. Al-Jabr, Rami T. El Afandy, Hassan M. Oubei, Dalaver H. Anjum, Mohamed Shehata, Tien K. Ng, and Boon S. Ooi "Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390L (1 March 2019); https://doi.org/10.1117/12.2511878

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