Axial junction GaAsP nanowires for solar cells applications (Conference Presentation)

Omar Saket; Fabien Bayle; chalermchai himwas; Valerio Piazza; Gilles Patriarche; Andréa Cattoni; Stéphane Collin; Fabrice Oehler; Laurent Travers; François Julien; Jean-Christophe Harmand; Maria Tchernycheva

doi:10.1117/12.2506889

8 March 2019 Axial junction GaAsP nanowires for solar cells applications (Conference Presentation)

Omar Saket, Fabien Bayle, chalermchai himwas, Valerio Piazza, Gilles Patriarche, Andréa Cattoni, Stéphane Collin, Fabrice Oehler, Laurent Travers, François Julien, Jean-Christophe Harmand, Maria Tchernycheva

Author Affiliations +

Proceedings Volume 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII; 109130N (2019) https://doi.org/10.1117/12.2506889
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Today, the record in photovoltaic (PV) conversion efficiency is detained by multi-junction solar cells based on III-V semiconductors. However, the wide adoption of these devices is hindered by their high production cost, especially the expensive III-V substrates. As an alternative, a hybrid solar cell was proposed by LaPierre et al.1 The cell geometry, which combines a 2D Si bottom-cell with a nanowire (NW) top-cell in a tandem device, presents a theoretical efficiency record of 34% when the top-cell band gap lies around 1.7 eV[1],[2]. In this work, we report the elaboration, nanoscale characterization and device fabrication of solar cells based on axial junction GaAsP NWs. Organized GaAsP NWs were grown on patterned SiO2/Si(111) substrates by MBE. Junction was axially created during the growth by incorporating different doping impurities (Be for p- and Si for n-doping). In-situ surface passivation using a radial GaP shell was applied to reduce non-radiative recombinations on surface states[3]. Local I-V characteristics and electron beam induced current (EBIC) microscopy under different biases were used to probe the electrical properties and the generation patterns of individual NWs. The doping concentrations and the minority carrier diffusion lengths were extracted from the EBIC generation profiles. Macroscopic devices based on NW arrays were fabricated by dielectric encapsulation and ITO contacting. Top view EBIC analyses were applied to probe the device homogeneity. References [1] R.R. LaPierre et al., J. Appl. Phys. 110 (2011), 014310. [2] S. Bu et al., Appl. Phys. Lett. 102 (2013), 031106. [3] C. Himwas et al., Nanotechnology. 28 (2017), 495707.

Conference Presentation

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Omar Saket, Fabien Bayle, chalermchai himwas, Valerio Piazza, Gilles Patriarche, Andréa Cattoni, Stéphane Collin, Fabrice Oehler, Laurent Travers, François Julien, Jean-Christophe Harmand, and Maria Tchernycheva "Axial junction GaAsP nanowires for solar cells applications (Conference Presentation)", Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130N (8 March 2019); https://doi.org/10.1117/12.2506889

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