A comparison of simulated spectra to observed spectra with regards to the valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber (Conference Presentation)

Vincent R. Whiteside; Brenden A. Magill; Matthew P. Lumb; Hamidreza Esmaielpour; Michael A. Meeker; Rathsara R. H. H. Mudiyanselage; Adrien Messager; Sangeetha Vijeyaragunathan; Tetsuya D. Mishima; Michael B. Santos; Igor Vurgaftman; Giti A. Khodaparast; Ian R. Sellers

doi:10.1117/12.2510126

8 March 2019 A comparison of simulated spectra to observed spectra with regards to the valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber (Conference Presentation)

Vincent R. Whiteside, Brenden A. Magill, Matthew P. Lumb, Hamidreza Esmaielpour, Michael A. Meeker, Rathsara R. H. H. Mudiyanselage, Adrien Messager, Sangeetha Vijeyaragunathan, Tetsuya D. Mishima, Michael B. Santos, Igor Vurgaftman, Giti A. Khodaparast, Ian R. Sellers

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Proceedings Volume 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII; 109130I (2019) https://doi.org/10.1117/12.2510126
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In order to accurately characterize the photoluminescence from an InAs/AlAsSb multi-quantum well hot carrier absorber, the band structure is generated with an 8 band k·p model utilizing the Naval Research Laboratory’s MultiBands® software tool. The simulated spectra for transitions between the lowest energy electron sub-band and the four lowest hole sub-bands are computed from the optical matrix elements and the calculated band structure. In depth temperature dependent simulations for absorption and photogenerated recombination of electron-hole carriers are compared with the experimental spectra. There is close agreement between simulated and observed spectra in particular, the room temperature e1-hh1 simulated transition energy of 805 meV nearly matches the 798 meV transition energy of the experimental photoluminescence spectra. Also, the expected energy separations between local maxima (p1-p2) in the simulated/experimental spectra have a difference of just 2 meV. The model has a valence band offset of 63 meV which is in general agreement with photoluminescence feature that suggests a valence band offset of 70 meV. To analyze the ‘hot’ carriers, the photoluminescence spectra is evaluated with three different methods, a linear fit to the high energy portion of the spectra and two methods which utilize either an equilibrium or non-equilibrium generalized Planck relation to fit the whole spectrum. The non-equilibrium fit enables individual carrier temperatures for both holes and electrons. This results in two very different carrier temperatures for holes and electrons: where the hole temperature, Th, is nearly equal to the lattice temperature, TL; while, the electron temperature, Te, is ‘hot’.

Conference Presentation

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Vincent R. Whiteside, Brenden A. Magill, Matthew P. Lumb, Hamidreza Esmaielpour, Michael A. Meeker, Rathsara R. H. H. Mudiyanselage, Adrien Messager, Sangeetha Vijeyaragunathan, Tetsuya D. Mishima, Michael B. Santos, Igor Vurgaftman, Giti A. Khodaparast, and Ian R. Sellers "A comparison of simulated spectra to observed spectra with regards to the valence band states in an InAs/AlAsSb multi-quantum well hot carrier absorber (Conference Presentation)", Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130I (8 March 2019); https://doi.org/10.1117/12.2510126

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KEYWORDS

Luminescence

Absorption

Band structure simulations

Coastal modeling

Computer simulations

Optical components

Optical matrix switches

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