A PMMA/PMGI Two Layer Resist System for Stable Lift-off Processing

Hiroshi Takenaka; Yoshihiro Todokoro

doi:10.1117/12.968522

1 August 1989 A PMMA/PMGI Two Layer Resist System for Stable Lift-off Processing

Hiroshi Takenaka, Yoshihiro Todokoro

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968522
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A two layer resist system for the e-beam/deep-UV same-level-mixed lithography are described, which consists of PMMA (poly ( methyl methacryrate )), as a top layer and PMGI (poly ( dimethyl glutarimide )) as a bottom layer. Controlled undercut profiles are obtained both in e-beam and deep-UV lithography. Good adhesion of PMGI to the GaAs substrate during wet recess-etching prevents excessive side etching of the substrate. 0.25-0.5 um gate electrodes of GaAs FET's have been fabricated by using the two layer resist system.

Citation Download Citation

Hiroshi Takenaka and Yoshihiro Todokoro "A PMMA/PMGI Two Layer Resist System for Stable Lift-off Processing", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968522

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