Investigation Of Linewidth Uniformity In X-Ray Lithography

U. Mescheder; U. Mackens; F. Mund

doi:10.1117/12.953112

19 July 1989 Investigation Of Linewidth Uniformity In X-Ray Lithography

U. Mescheder, U. Mackens, F. Mund

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953112
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Recently several groups have reported about the production of half micron devices using SOR X-ray lithography /1,2,3/. The device performance was compared to those devices produced by using other lithographic techniques (e.g. electron beam direct writing). However, for future applications it is necessary to fulfill the more stringent subhalf micron design rules. One important challenge is the linewidth control within several nm and the impact on yield, device quality and overlay accuracy.

Citation Download Citation

U. Mescheder, U. Mackens, and F. Mund "Investigation Of Linewidth Uniformity In X-Ray Lithography", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953112

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