A Model for End Point Detect During the Development of Photoresists

Michael P. C. Watts; Stephen Williams; Patrick McCarthy; Michael Tsai; David Eimerl

doi:10.1117/12.953105

19 July 1989 A Model for End Point Detect During the Development of Photoresists

Michael P. C. Watts, Stephen Williams, Patrick McCarthy, Michael Tsai, David Eimerl

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953105
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

End point detect during photoresist develop has the potential to reduce the variation of line width caused by variations in coat, bake, develop, wafer reflectivity, air temperature etc. This paper will describe a model for the reflectivity signals used to detect the end point during develop. Examples will be given of signal variation caused by a number of different process variations.

Citation Download Citation

Michael P. C. Watts, Stephen Williams, Patrick McCarthy, Michael Tsai, and David Eimerl "A Model for End Point Detect During the Development of Photoresists", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953105

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