Single Level Dry Developable Resist Systems, Based On Gas Phase Silylation

Jack P. W. Schellekens; Robert-Jan Visser

doi:10.1117/12.953033

30 January 1989 Single Level Dry Developable Resist Systems, Based On Gas Phase Silylation

Jack P. W. Schellekens, Robert-Jan Visser

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953033
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

In this paper various single level resist systems are presented that combine gas phase silylation with dry development. For novolak-diazoquinone type resists it is shown that the photoselectivity of the silylation process is determined, to a large extent, by the presence of hydrogen bonds between the resin and the un-exposed sensitizer. Upon irradiation these physical crosslinks are replaced by weaker hydrogen bonds between the resin and the indene-carboxylic acid. The effect of the presilylation bake temperature and decarboxylation are discussed. Also the influence of decomposition of the photoactive compound on the selectivity is shown. Other systems presented in this paper are based on chemical crosslinking of the resist. SUPER (SUbmicron Positive dry Etch Resist) is based on the combination of acid-catalyzed crosslinking and gas phase silylation. Because of the chemistry that is used, SUPER can be an interesting candidate for DUV-lithography. Crosslinking of, novolak-diazoquinone type photoresists is another possibility to create a selectivity for the silylation process. A system based on electron beam lithography is presented. Sub-half-micron features, without problems with the proximity effect, are shown.

Citation Download Citation

Jack P. W. Schellekens and Robert-Jan Visser "Single Level Dry Developable Resist Systems, Based On Gas Phase Silylation", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953033

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