Sensitive Electron Beam Resist Systems Based On Acid-Catalyzed Deprotection

Hiroshi Ito; Lester A. Pederson; Kaolin N. Chiong; Susan Sonchik; Cecilia Tsai

doi:10.1117/12.953013

30 January 1989 Sensitive Electron Beam Resist Systems Based On Acid-Catalyzed Deprotection

Hiroshi Ito, Lester A. Pederson, Kaolin N. Chiong, Susan Sonchik, Cecilia Tsai

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953013
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Poly(p-t-butoxycarbonyloxystyrene) (PBOCST) and poly(t-butyl p-vinylbenzoate) (PTBVB) provide sensitive, negative tone, electron beam resist systems when sensitized with "onium salt" acid generators. The sensitivity is high (0.5-2.5μC/cm² at 20 keV) owing to chemical amplification. The resolution and contrast are also high owing to the polarity change incorporated in the design. Development with an organic solvent provides sub-half-micrometer resolution.

Citation Download Citation

Hiroshi Ito, Lester A. Pederson, Kaolin N. Chiong, Susan Sonchik, and Cecilia Tsai "Sensitive Electron Beam Resist Systems Based On Acid-Catalyzed Deprotection", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953013

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